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| SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Diodes Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 0.55 Features +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Power dissipation Forward Current Reverse Voltage Operating and storage junction temperature range (Ta mb=25 ) Symbol PD IF VR TJ, Tstg Limits 150 75 85 -55 to +150 Unit mW mA V Electrical Characteristics Ta = 25 Param eter Reverse breakdown voltage Reverse voltage leakage current Sym bol V(BR) IR Conditions IR = 100 A Min 85 2 0.03 715 855 1000 1250 1.5 4 pF ns mV Max Unit V A VR =75 V VR =25 V IF =1 m A Forward voltage VF IF =10 m A IF = 50 m A IF =150 m A Diode capacitance Reverse recovery tim e CD trr VR=0 V,f=1MHz Marking Type Marking BAS16T A2 BAW56T JD BAV70T JJ BAV99T JE +0.05 0.8-0.05 www.kexin.com.cn 1 |
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